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  Datasheet File OCR Text:
 Fast Recovery Diodes (FRD)
MA2D601
Silicon planar type
Unit : mm
15.0 0.5
For high-frequency rectification For Snubber circuit of power supplies For secondary side rectification for a power supply I Features
* High reverse voltage VR > 600 V * Short reverse recovery time trr < 50nsec * TO-220D (Full-pack package) with high dielectric breakdown voltage > 5.0 kV
9.9 0.3
3.0 0.5
4.6 0.2 2.9 0.2
3.2 0.1
1.5 - 0.4
+0
13.7 0.2 4.2 0.2
2.6 0.1 1.4 0.2 0.8 0.1
0.55 0.15
I Absolute Maximum Ratings Ta = 25C
Parameter Repetitive peak reverse voltage Non-repetitive peak reverse surge voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VRRM VRSM IF(AV) IFSM Tj Tstg Rating 600 600 5.0 50 -40 to +150 -40 to +150 Unit V V A A C C
5.08 0.5 2.54 0.3 1 2
1 : Cathode 2 : Anode TO-220D Package (2-pin)
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
I Electrical Characteristics Ta = 25C 3C
Parameter Repetitive peak reverse current Symbol IRRM1 IRRM2 Forward voltage (DC) Reverse recovery time* VF trr Rth(j-c) Rth(j-a) Note) 1. Rated input/output frequency: 10 MHz 2. Tightening torque-max. 8 kg x cm 3. * : trr measuring circuit
50 50
Conditions VRRM = 600 V, TC = 25C VRRM = 600 V, Tj = 150C IF = 5.0 A, TC = 25C IF = 1 A, IR = 1 A
Min
Typ
Max 100 500 1.5 50 3.0 63
Unit A A V ns C/W C/W
Thermal resistance
trr IF
D.U.T
5.5
IR
0.1 x IR
1
MA2D601
IF V F
100
100 Ta = 150C
Fast Recovery Diodes (FRD)
IR V R
10
1
Reverse current IR (A)
Ta = 150C
10
Forward current IF (A)
1
0.1
25C
0.1
0.01
0.001
0.01
25C
0.000 1
0
0.5
1
1.5
2
2.5
0.001
0
100
200
300
400
500
600
Forward voltage VF (V)
Reverse voltage VR (V)
2


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